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LAB
TO3 Package Outline.
Dimensions in mm (Inches)
SEME
SML1001R1AN SML901R1AN SML1001R3AN SML901R3AN
1000V 900V 1000V 900V
9.5A 9.5A 8.5A 8.5A
W 1.10W W 1.10W W 1.30W W 1.30W
POWER MOS IVTM
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS (Tcase =25C unless otherwise stated)
Parameter VDSS ID IDM VGS PD TJ , TSTJ Drain - Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate - Source Voltage Total Power Dissipation @ Tcase = 25C Derate above 25C Operating and Storage Junction Temperature Range 901R1AN 900 9.5 38 30 230 SML 1001R1AN 901R3AN 1000 900 8.5 34 1001R3AN 1000 Unit V A A V W
-55 to 150
C
STATIC ELECTRICAL RATINGS (Tcase =25C unless otherwise stated)
Characteristic / Test Conditions / Part Number Drain - Source Breakdown Voltage SML1001R1AN / SML1001R3AN (VGS = 0V , ID = 250mA) Zero Gate Voltage Drain Current Gate - Source Leakage Current On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max , VGS = 10V) Static Drain - Source On State Resistance 2 (VGS =10V , ID = 0.5 ID [Cont.]) SML901R1AN / SML901R3AN (VGS = 0V , VDS = VDSS) (VGS = 0V , VDS = 0.8VDSS , TC = 125C) (VGS = 30V , VDS = 0V) SML1001R1AN / SML901R1AN SML1001R1AN / SML901R3AN 9.5 8.5 2 SML1001R1AN / SML901R1AN SML1001R3AN / SML901R3AN 4 1.1 1.3 Min. 1000 900 250 1000 100 Typ. Max. Unit V
BVDSS IDSS IGSS ID(ON)
mA
nA A V
VGS(TH) Gate Threshold Voltage RDS(ON)
W
1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 12/00
SML1001R1AN SML901R1AN SML1001R3AN SML901R3AN
1000V 900V 1000V 900V
9.5A 9.5A 8.5A 8.5A
W 1.10W W 1.10W W 1.30W W 1.30W
Test Conditions. VGS = 0V VDS = 25V f = 1MHz VGS = 10V ID = ID [Cont.] VDD = 0.5 VDSS VDD = 0.5 VDSS ID = ID [Cont.] VGS = 15V RG = 1.8W Part Number SML1001R1AN / SML901R1AN SML901R3AN / SML901R3AN SML1001R1AN / SML901R1AN SML1001R3AN / SML901R3AN
LAB
Min. Typ. 2460 360 105 90 9.3 47 15 16 64 24 Max. Unit 2950 500 160 130 14 70 30 32 95 48 ns nC pF
SEME
DYNAMIC CHARACTERISTICS
Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge3 Gate - Source Charge Gate - Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE - DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions. IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current1 (Body Diode) Diode Forward Voltage2 (VGS = 0V , IS = - ID [Cont.]) Reverse Recovery Time (IS = - ID [Cont.] , dls / dt = 100A/ms Reverse Recovery Charge 320 2.2 636 4.5 Min. Typ. Max. Unit 9.5 A 8.5 38 34 1.3 A
V
1200 9
ns
mC
SAFE OPERATING AREA CHARACTERISTICS
SOA1 SOA2 ILM Characteristic / Test Conditions / Part Number Safe Operating Area VDS = 0.4 VDSS , IDS = PD / 0.4 VDSS , t = 1 Sec Safe Operating Area Inductive Current Clamped IDS = IDS [Cont.] , VDS = PD / ID [Cont.] , t = 1 Sec SML1001R1AN / SML901R1AN SML1001R3AN / SML901R3AN Min. 230 230 38 34 Typ. Max. Unit W
A
THERMAL CHARACTERISTICS (Tcase =25C unless otherwise stated)
RqJC RqJA TL Characteristic / Test Conditions. Junction to Case Junction to Ambient Max. Lead Temperature for Soldering Conditions: 0.065" from Case for 10 sec. 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2% 3) See MIL-STD-750 Method 3471 Min. Typ. Max. Unit 0.53 C/W 30 300 C/W C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 12/00

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